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| Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFN 55N50F VDSS ID25 RDS(on) = = = 500 V 55 A 85 m D trr 250 ns G S S Maximum Ratings 500 500 20 30 55 220 55 60 3.0 5 600 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W C C C C V~ V~ miniBLOC, SOT-227 B E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Features l RF capable Mosfets l Rugged polysilicon gate cell structure l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l Pulse generation l Laser drivers Advantages l Easy to mount l Space savings l High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 3.0 5.5 200 TJ = 25C TJ = 125C 100 3 85 V V nA A mA m VDSS VGH(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 1 mA V DS = VGS, ID = 8 mA V GS = 20 VDC, VDS = 0 VDS = VDSS V GS = 0 V VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2001 IXYS All rights reserved 98854 (8/01) IXFN 55N50F Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 22 33 6700 VGS = 0 V, VDS = 25 V, f = 1 MHz 1250 330 24 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 20 45 9.6 195 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 50 95 0.21 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W A B C D E F G H J K L M N O P Q R S T U miniBLOC, SOT-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test M4 screws (4x) supplied Dim. Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 55 220 1.5 250 1.6 13 A A V ns C A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 50A, -di/dt = 100 A/s, VR = 100 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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